Semiconductor
Discover how sub-micron IR with optional co-located fluorescence uniquely detects, measures and provides chemical ID of small organic contaminants and defects unable to be measured by other techniques
Why O-PTIR for semiconductor failure analysis?
The mIRage platform uniquely provides automated chemical ID of organic contaminants not currently measurable by existing FTIR or Raman spectroscopy. Many customers have found significant time savings using O-PTIR to identify small organic contaminants.
- Sub-micron IR spatial resolution – 30x better than traditional FTIR/QCL microscopy with minimal sample preparation
- O-PTIR provides superior measurement of dark colored, light sensitive samples currently limited by existing Raman microscopy
- Non-contact, non-destructive, reflection mode measurements with FTIR transmission/ATR-like spectral quality directly library searchable
- Unique co-located fluorescence microscopy for faster discovery of auto-fluorescent contaminants for characterization by O-PTIR analysis.
Simultaneous O-PTIR and Raman for complimentary and confirmatory analysis with faster time to data and enhanced data confidence
Sub-micron IR resolution chemical imaging of failed device features
High resolution chemical imaging of failed device features
Figure opposite illustrates how O-PTIR overcomes existing challenges of infrared spectroscopy techniques with an example highlighting the dark suspected creep in the underfill (UF) between two metal cross-sectioned surfaces [Zulkifli, 2022]. With the O-PTIR technique, several components can be spectroscopically separated and identified. Here, the top 3µm of the dark contamination has been identified as an epoxy component, which is usually the organic binder component in underfill materials.
The bottom 3µm layer appears to contain significant amounts of carbon and carboxylates; the latter may have originated from oxidized cellulosic matter. Such unprecedented details provide investigative insights into tracking down the source of the contamination, raw materials, or errors in the process. In contrast, conventional FT-IR microspectroscopy could not provide meaningful information from the same specimen [Zulkifli, 2022].
Finally, the analysis was achieved from a cross-sectioned surface using standard chemo-mechanically polishing processes, representing a significant time savings over more involved sample preparation techniques, such as those requiring labor-intensive focused ion beam (FIB)-based thin sectioning.
Simultaneous IR+Raman spectral searching with 2D search result representation with KnowItAll®
One of the goals of any FA process is the chemical identification of the unknown material and to that end, the final step, after spectral acquisition is to search against a spectral database. Traditionally IR spectra would be searched against an IR spectral library and Raman spectral would be searched, separately, against a Raman spectral library. The user would then examine the two separate so-called “hitlists” for IR and Raman spectra.
Now, with the advent of simultaneous submicron IR+Raman spectral acquisition, as seen in figure here, not only are the IR and Raman spectra simultaneously collected, but now the spectral search of both IR and Raman spectral occur simultaneously, with a single click from the data acquisition software.
Furthermore, to aid in evaluating the results, the IR and Raman hit lists are presented in a 2D scatter plot, with the IR Hit Quality Index (HQI) plotted on one axis and the Raman HQI plotted on the other axis as shown in the figure above.
For more information on Wiley’s KnowItAll® products, click here
Chemical ID of small unknown defects
mIRage provides the ability to identify unknowns of small size using O-PTIR or simultaneous IR+Raman. The visible image shows the location of a 6 µm defect. The upper right image shows a comparison of unknown O-PTIR spectrum to the nearest library match.
The image confirms the results of the unknown spectra with Raman. This approach enables a complementary approach resulting in a higher confidence in results.
Measurement of buried defects
mIRage enables users to identify subsurface defects under thin films. The upper left schematic provides a representation of the sample and measurement. The lower left visible camera image of the highlights where the spectra were taken on the defect area, The O-PTIR spectra show measurements on and off the defect. The spectra colors correspond to markers on visible image.
Identifying defects in multilayer films
The mIRage can easily identify defects in multilayer films with minimal sample preparation.
The optical image shows a defect in a 240 µm thick two-layer film. Color markers on image represent the location of subsequent O-PTIR spectral collection. The O-PTIR spectra were collected in both the defect-free (red) and defect (blue) region of the sample. The spectra display peaks indicative of isotactic polypropylene (998 cm-1). In the plot of the varying intensities for the isotactic polypropylene peak, both on the defect and off, the film region shows consistent signal intensity, while the defect region shows significant variability.
Application note:
Novel sub-micron infrared microspectroscopy for failure analysis of semiconductor device
Webinar:
Identifying organic contaminants with Sub-micron IR and simultaneous Raman with fluorescence imaging
Webinars
- Semiconductor
Identifying organic contaminants with Sub-micron IR and simultaneous Raman with fluorescence imaging
- August 8, 2024
Need more information?
Discover how O-PTIR technology can elevate your research or help solve your toughest challenges. Our team are happy to assist and answer your questions.
